Evolution of in-plane texture in reactively sputtered CrN films
نویسندگان
چکیده
منابع مشابه
Reflection mode XAFS investigations of reactively sputtered thin films.
Amorphous Ta-oxide and Sn-nitride thin films were prepared by reactive sputter deposition on smooth float glass substrates and investigated ex situ using reflection mode XAFS. The absorption coefficient mu and its fine structure were extracted from the measured reflection mode XAFS spectra with a method based on the Kramers-Kronig transform. Bond distances, coordination numbers and Debye-Waller...
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The surface resistance of niobium nitride {NbN) thin films has been measured at 7. 78 and 10.14 GHz in the temperature range of 1.5 to 4.2 K. The films were reactively sputtered on sapphire substrates to a thickness of approximately 1 micron. The surface resistance was determined by measuring the quality factor (Q) of the TEo] 1 mode of a lead-plated copper cavity where the NbN served as one en...
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Real surfaces are not flat on an atomic scale. Studying the effects of roughness on microstructural evolution is of relevance because films are sputtered onto nonideal surfaces in many applications. To this end, amorphous rough substrates of two different morphologies, either elongated mounds or facets, were fabricated. The microstructural development of films deposited onto these surfaces was ...
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The nanocrystallization process of reactively sputtered thin amorphous Ta–Si–N films is investigated by anomalous small angle x-ray scattering ~ASAXS! and x-ray diffraction ~XRD!. Changes in the microstructure in Ta40Si14N46 films, density variations in the amorphous matrix, decomposition, formation, and growth of nanocrystals after vacuum anneals at different temperatures in the range between ...
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The anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ'-Fe4N films is investigated systematically. The Hall resistivity is positive over the entire temperature range. The magnetization, carrier density and grain boundary scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of ρAH ∝ ρ(γ)(xx) is larger than ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2005
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1823022